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AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Standard Product AO8814is Pbfree (meets ROHS & Sony 259 specifications). AO8814L is a Green Product ordering option. AO8814 and AO8814L are electrically identical. Features VDS (V) = 20V ID = 7.5 A (VGS = 10V) RDS(ON) < 16m (VGS = 10V) RDS(ON) < 18m (VGS = 4.5V) RDS(ON) < 24m (VGS = 2.5V) RDS(ON) < 34m (VGS = 1.8V) ESD Rating: 2500V HBM D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 12 7.5 6 30 1.5 0.96 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 64 89 53 Max 83 120 70 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO8814 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, IG=250uA VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=7.5A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=7A VGS=2.5V, ID=6A VGS=1.8V, ID=5A gFS VSD IS Forward Transconductance VDS=5V, ID=7.5A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 12 0.5 30 13 18 15 19 26 30 0.74 1 2.5 1390 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 190 150 1.5 15.4 VGS=4.5V, VDS=10V, ID=7.5A 1.4 4 6.2 VGS=5V, VDS=10V, RL=1.3, RGEN=3 IF=7.5A, dI/dt=100A/s 11 40.5 10 15 5.1 16 22 18 24 34 0.71 1 Min 20 1 5 10 Typ Max Units V A A V V A m m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 2: June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO8814 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 20 4V 3V VGS =2V 20 ID(A) ID(A) 10 125C 25C 0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 VDS(Volts) VGS(Volts) Figure 2: Transfer Characteristics 15 VDS=5V 10 5 VGS =1.5V 0 c Figure 1: On-Regions Characteristi s 50 Normalize ON-Resistance 40 RDS(ON)(m) VGS =1.8V 30 20 10 0 0 5 10 15 20 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS =2.5V VGS =4.5V VGS =10V 1.6 VGS=4.5V ID=7A 1.2 VGS=2.5V ID=6A VGS=1.8V ID=5A VGS=10V ID=7.5A 1.4 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 60 ID=7.5A 50 RDS(ON)(m) 40 IS(A) 30 20 25C 10 0 2 4 6 8 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C 1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics 25C 125C Alpha & Omega Semiconductor, Ltd. AO8814 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 VDS=10V 4 VGS(Volts) 3 2 1 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 5 ID=7.5A Capacitance (pF) 1600 1200 800 400 0 0 5 Crss Ciss Coss 10 15 20 VDS(Volts) Figure 8: Capacitance Characteristics 100.0 TJ(Max)=150C TA=25C RDS(ON) limited 10s 100s 1ms 0.1s 10ms Power (W) 40 TJ(Max)=150C TA=25C ID (Amps) 10.0 30 20 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=83C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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